IXTV02N250S

Obsolete

IXYS

MOSFET N-CH 2500V 200MA PLUS220

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Obsolete

IXYS

MOSFET N-CH 2500V 200MA PLUS220

Technical Specifications

Parameters and characteristics for this part

Specification	IXTV02N250S

Current - Continuous Drain (Id) @ 25°C	200 mA
Drain to Source Voltage (Vdss)	2500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7.4 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	116 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PLUS-220SMD
Power Dissipation (Max)	83 W
Rds On (Max) @ Id, Vgs	450 Ohm
Supplier Device Package	PLUS-220SMD
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Technology	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Supplier Device Package	Vgs (Max)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Package / Case
IXYS IXTV02N250S	N-Channel	10 V	450 Ohm	MOSFET (Metal Oxide)	7.4 nC	Surface Mount	PLUS-220SMD	20 V	2500 V	83 W	200 mA	116 pF	-55 °C	150 °C	4.5 V	PLUS-220SMD

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 2500 V 200mA (Tc) 83W (Tc) Surface Mount PLUS-220SMD

Technical documentation and resources