IPW65R125C7XKSA1

Active

Infineon Technologies

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-247 PACKAGE; 125 MOHM; HIGHEST PERFORMANCE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

IPW65R125C7XKSA1

Active

Infineon Technologies

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-247 PACKAGE; 125 MOHM; HIGHEST PERFORMANCE

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPW65R125C7XKSA1

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	35 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1670 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	101 W
Rds On (Max) @ Id, Vgs	125 mOhm
Supplier Device Package	PG-TO247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IPW65R125 Series

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Mounting Type	Vgs (Max)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]
Infineon Technologies IPW65R125C7XKSA1	18 A	PG-TO247-3	35 nC	4 V	10 V	N-Channel	Through Hole	20 V	125 mOhm	101 W	650 V	TO-247-3	-55 °C	150 °C	MOSFET (Metal Oxide)	1670 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 5.62
		10	$ 3.76
		100	$ 2.70
		500	$ 2.25
		1000	$ 2.21

Description

General part information

IPW65R125 Series

Infineon’sCoolMOS™ C7 superjunction MOSFETseries is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.

Documents

Technical documentation and resources