STU13NM60N

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STMicroelectronics

MOSFET N-CH 600V 11A IPAK

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STMicroelectronics

MOSFET N-CH 600V 11A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	STU13NM60N

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	27 nC
Input Capacitance (Ciss) (Max) @ Vds	790 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	90 W
Rds On (Max) @ Id, Vgs	360 mOhm
Supplier Device Package	TO-251 (IPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

MOSFET N-CH 600V 11A IPAK

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Package / Case	Operating Temperature	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	FET Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Technology
STMicroelectronics STU13NM60N	11 A	TO-251 (IPAK)	Through Hole	10 V	790 pF	90 W	IPAK, TO-251-3 Short Leads, TO-251AA	150 °C	600 V	27 nC	4 V	N-Channel	360 mOhm	25 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	3000	$ 1.20

General part information

N-Channel 600 V 11A (Tc) 90W (Tc) Through Hole TO-251 (IPAK)

Technical documentation and resources