Specification	SQ4917EY-T1_BE3

Channel Count	2
Configuration	P-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Tc)	8 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Max)	65 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	1910 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power - Max (Tc)	5 W
Qualification	AEC-Q101
Rds On (Max)	48 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.5 V

SQ4917 Series

Part	Input Capacitance (Ciss) (Max)	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Package Length	Package Name	Package Width	Channel Count	Configuration	Configuration - Features	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Qualification	Rds On (Max)	Gate Charge (Max)	Power - Max (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Grade
Vishay Dale SQ4917EY-T1_BE3	1910 pF	Surface Mount	MOSFET (Metal Oxide)	60 V	0.154 in	8-SOIC	3.9 mm	2	P-Channel	Dual	8 A	2.5 V	AEC-Q101	48 mOhm	65 nC	5 W	-55 °C	175 °C	Automotive
Vishay Dale SQ4917CEY-T1_GE3	1910 pF	Surface Mount	MOSFET (Metal Oxide)	60 V	0.154 in	8-SOIC	3.9 mm	2	P-Channel	Dual	8 A	2.5 V	AEC-Q101	48 mOhm	65 nC	5 W	-55 °C	175 °C	Automotive

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