CSD17309Q3
Active30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 6.3 MOHM
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CSD17309Q3
Active30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 6.3 MOHM
Technical Specifications
Parameters and characteristics for this part
| Specification | CSD17309Q3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 60 A, 20 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 3 V, 8 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1440 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) [Max] | 2.8 W |
| Rds On (Max) @ Id, Vgs | 5.4 mOhm |
| Supplier Device Package | 8-VSON-CLIP (3.3x3.3) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 10 V, -8 V |
| Vgs(th) (Max) @ Id [Max] | 1.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.09 | |
| 10 | $ 0.90 | |||
| 100 | $ 0.70 | |||
| 500 | $ 0.59 | |||
| 1000 | $ 0.48 | |||
| Digi-Reel® | 1 | $ 1.09 | ||
| 10 | $ 0.90 | |||
| 100 | $ 0.70 | |||
| 500 | $ 0.59 | |||
| 1000 | $ 0.48 | |||
| Tape & Reel (TR) | 2500 | $ 0.45 | ||
| 5000 | $ 0.43 | |||
| 12500 | $ 0.41 | |||
| Texas Instruments | LARGE T&R | 1 | $ 0.81 | |
| 100 | $ 0.62 | |||
| 250 | $ 0.46 | |||
| 1000 | $ 0.33 | |||
CSD17309Q3 Series
30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 6.3 mOhm
| Part | Mounting Type | Technology | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id [Max] | Supplier Device Package | Vgs (Max) | Package / Case | FET Type | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Max] | Operating Temperature [Min] | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments CSD17309Q3 | Surface Mount | MOSFET (Metal Oxide) | 1440 pF | 1.7 V | 8-VSON-CLIP (3.3x3.3) | -8 V, 10 V | 8-PowerTDFN | N-Channel | 20 A, 60 A | 150 °C | -55 °C | 30 V | 10 nC | 2.8 W | 3 V, 8 V | 5.4 mOhm |
Description
General part information
CSD17309Q3 Series
This 30 V, 4.2 mΩ NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications.
This 30 V, 4.2 mΩ NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications.
Documents
Technical documentation and resources