
SI7456DP-T1-GE3
ObsoleteVishay Dale
POWER MOSFET, N CHANNEL, 100 V, 5.7 A, 0.021 OHM, POWERPAK SO, SURFACE MOUNT

SI7456DP-T1-GE3
ObsoleteVishay Dale
POWER MOSFET, N CHANNEL, 100 V, 5.7 A, 0.021 OHM, POWERPAK SO, SURFACE MOUNT
Description
General part information
SI7456 Series
The SI7456DP-TI-GE3 is a 100VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for DC-to-DC primary side switch, telecom/server and full/half-bridge DC-to-DC applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | SI7456DP-T1-GE3 |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 5.7 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On) | 6 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 44 nC, 44 nC |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | PowerPAK® SO-8 |
| Package Name | PowerPAK® SO-8 |
| Power Dissipation (Max) | 1.9 W |
| Rds On (Max) | 25 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
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