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SI7456DP-T1-GE3

SI7456DP-T1-GE3

Obsolete
Vishay Dale

POWER MOSFET, N CHANNEL, 100 V, 5.7 A, 0.021 OHM, POWERPAK SO, SURFACE MOUNT

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SI7456DP-T1-GE3

SI7456DP-T1-GE3

Obsolete
Vishay Dale

POWER MOSFET, N CHANNEL, 100 V, 5.7 A, 0.021 OHM, POWERPAK SO, SURFACE MOUNT

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Description

General part information

SI7456 Series

The SI7456DP-TI-GE3 is a 100VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for DC-to-DC primary side switch, telecom/server and full/half-bridge DC-to-DC applications.

Technical Specifications

Parameters and characteristics for this part

SpecificationSI7456DP-T1-GE3
Current - Continuous Drain (Id) (Ta)5.7 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)6 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)44 nC, 44 nC
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CasePowerPAK® SO-8
Package NamePowerPAK® SO-8
Power Dissipation (Max)1.9 W
Rds On (Max)25 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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CAD

3D models and CAD resources for this part