MEE250-12DA

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IXYS

DIODE MODULE GP 1200V 260A Y4-M6

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IXYS

DIODE MODULE GP 1200V 260A Y4-M6

Technical Specifications

Parameters and characteristics for this part

Specification	MEE250-12DA

Current - Average Rectified (Io) (per Diode)	260 A
Current - Reverse Leakage @ Vr	12 mA
Diode Configuration	1 Pair Series Connection
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	Y4-M6
Reverse Recovery Time (trr)	500 ns
Speed	200 mA, 500 ns
Supplier Device Package	Y4-M6
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Technology	Package / Case	Current - Average Rectified (Io) (per Diode)	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Diode Configuration	Speed	Current - Reverse Leakage @ Vr	Mounting Type
IXYS MEE250-12DA	500 ns	150 °C	-40 °C	1.8 V	Standard	Y4-M6	260 A	1.2 kV	Y4-M6	1 Pair Series Connection	200 mA 500 ns	12 mA	Chassis Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 1 Pair Series Connection 1200 V 260A Chassis Mount Y4-M6

Technical documentation and resources