ZTX694B

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Diodes Inc

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 120 V, 500 MA, 1 W, E-LINE, THROUGH HOLE

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Active

Diodes Inc

BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 120 V, 500 MA, 1 W, E-LINE, THROUGH HOLE

Technical Specifications

Parameters and characteristics for this part

Specification	ZTX694B

Current - Collector (Ic) (Max) [Max]	500 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	400
Frequency - Transition	130 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	200 C
Operating Temperature [Min]	-55 °C
Package / Case	E-Line-3
Power - Max [Max]	1 W
Supplier Device Package	E-Line (TO-92 compatible)
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	120 V

NPN, 120V, 0.5A, E-Line

Part	Frequency - Transition	Mounting Type	Current - Collector (Ic) (Max) [Max]	Transistor Type	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package
Diodes Inc ZTX694B	130 MHz	Through Hole	500 mA	NPN	E-Line-3	400	500 mV	100 nA	1 W	-55 °C	200 C	120 V	E-Line (TO-92 compatible)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN, 120V, 0.5A, E-Line

Technical documentation and resources