Specification	SI3430DV-T1-BE3

Current - Continuous Drain (Id) (Ta)	1.8 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Package Name	6-TSOP
Power Dissipation (Max)	1.14 W
Rds On (Max)	170 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4.2 V

SI3430 Series

Part	Package / Case	Mounting Type	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Ta)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	FET Type	Technology	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs (Max)	Vgs(th) (Max)	Rds On (Max)	Gate Charge (Max)
Vishay Dale SI3430DV-T1-BE3	SOT-23-6 Thin TSOT-23-6	Surface Mount	6-TSOP	-55 °C	150 °C	1.8 A	6 V	10 V	N-Channel	MOSFET (Metal Oxide)	1.14 W	100 V	20 V	4.2 V	170 mOhm
Vishay Dale SI3430DV-T1-GE3	SOT-23-6 Thin TSOT-23-6	Surface Mount	6-TSOP	-55 °C	150 °C	1.8 A	6 V	10 V	N-Channel	MOSFET (Metal Oxide)	1.14 W	100 V	20 V	2 V	170 mOhm	6.6 nC

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