Part	Package / Case	Qualification	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Grade	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	FET Type	Package Name	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Rds On (Max)	Technology	Vgs(th) (Max)
NXP USA Inc. BUK7Y41-80E/GFX
NXP USA Inc. BUK7Y25-80E/GFX	SC-100 SOT-669	AEC-Q101	-55 °C	175 °C	Surface Mount	95 W	1800 pF	Automotive	80 V	25.9 nC	39 A	N-Channel	LFPAK56 Power-SO8	10 V	20 V	25 mOhm	MOSFET (Metal Oxide)	4 V
NXP USA Inc. BUK7E07-55B,127	I2PAK TO-262-3 Long Leads TO-262AA	AEC-Q101	-55 °C	175 °C	Through Hole	203 W	3760 pF	Automotive	55 V	53 nC	75 A	N-Channel	I2PAK	10 V	20 V	7.1 mOhm	MOSFET (Metal Oxide)	4 V
NXP USA Inc. BUK7E04-40A,127
NXP USA Inc. BUK7Y25-80E/CX	SC-100 SOT-669	AEC-Q101	-55 °C	175 °C	Surface Mount	95 W	1800 pF	Automotive	80 V	25.9 nC	39 A	N-Channel	LFPAK56 Power-SO8	10 V	20 V	25 mOhm	MOSFET (Metal Oxide)	4 V
NXP USA Inc. BUK7E4R3-75C,127	I2PAK TO-262-3 Long Leads TO-262AA	AEC-Q101	-55 °C	175 °C	Through Hole	333 W	11659 pF	Automotive	75 V	142 nC	100 A	N-Channel	I2PAK	10 V	20 V	4.3 mOhm	MOSFET (Metal Oxide)	4 V
NXP USA Inc. BUK7E1R6-30E,127	I2PAK TO-262-3 Long Leads TO-262AA	AEC-Q101	-55 °C	175 °C	Through Hole	349 W	11960 pF	Automotive	30 V	154 nC	120 A	N-Channel	I2PAK	10 V	20 V	1.6 mOhm	MOSFET (Metal Oxide)	4 V
NXP USA Inc. BUK7E2R7-30B,127	I2PAK TO-262-3 Long Leads TO-262AA	AEC-Q101	-55 °C	175 °C	Through Hole	300 W	6212 pF	Automotive	30 V	91 nC	75 A	N-Channel	I2PAK	10 V	20 V	2.7 mOhm	MOSFET (Metal Oxide)	4 V
NXP USA Inc. BUK7Y54-75B,115	SC-100 SOT-669	AEC-Q101	-55 °C	175 °C	Surface Mount	59 W	803 pF	Automotive	75 V	12 nC	21.4 A	N-Channel	LFPAK56 Power-SO8	10 V	20 V	54 mOhm	MOSFET (Metal Oxide)	4 V
NXP USA Inc. BUK7E4R0-80E,127	I2PAK TO-262-3 Long Leads TO-262AA	AEC-Q101	-55 °C	175 °C	Through Hole	349 W	12030 pF	Automotive	80 V	169 nC	120 A	N-Channel	I2PAK	10 V	20 V	4 mOhm	MOSFET (Metal Oxide)	4 V

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BUK7E04-40A,127 | Datasheet