Specification	SQ2319ES-T1-GE3

Current - Continuous Drain (Id) (Tc)	4.6 A
Drain to Source Voltage (Vdss)	40 V
FET Type	P-Channel
Gate Charge (Max)	16 nC
Input Capacitance (Ciss) (Max)	620 pF
Mounting Type	Surface Mount
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SOT-23-3 (TO-236)
Rds On (Max)	75 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.5 V

SQ2319 Series

Part	Package Name	Rds On (Max)	Gate Charge (Max)	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Mounting Type	Technology	FET Type	Input Capacitance (Ciss) (Max)	Package / Case	Qualification	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Grade	Vgs (Max)
Vishay Dale SQ2319ES-T1-GE3	SOT-23-3 (TO-236)	75 mOhm	16 nC	2.5 V	4.6 A	40 V	Surface Mount	MOSFET (Metal Oxide)	P-Channel	620 pF	SC-59 SOT-23-3 TO-236-3
Vishay Dale SQ2319ADS-T1_BE3	SOT-23-3 (TO-236)	75 mOhm	16 nC	2.5 V	4.6 A	40 V	Surface Mount	MOSFET (Metal Oxide)	P-Channel	620 pF	SC-59 SOT-23-3 TO-236-3	AEC-Q101	2.5 W	-55 °C	150 °C	10 V	4.5 V	Automotive	20 V

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