Specification	S4D10120E

Capacitance	772 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage	30 µA
Mounting Type	Surface Mount
Operating Temperature - Junction (Max)	175 °C
Operating Temperature - Junction (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	DPak
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Speed - Fast Recovery (Minimum)	500 mA
Speed - Recovery Current	500 mA, 500 mA
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)	1200 V
Voltage - Forward (Vf) (Max)	1.8 V

S4D1012 Series

Part	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Mounting Type	Current - Reverse Leakage	Current - Average Rectified (Io)	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Package Name	Voltage - DC Reverse (Vr) (Max)	Voltage - Forward (Vf) (Max)	Capacitance	Package / Case	Technology	Package Width	Package Length
SMC Diode Solutions S4D10120H	500 mA	No Recovery Time	500 mA 500 mA	Through Hole	30 µA	10 A	175 °C	-55 °C	TO-247AC	1200 V	1.8 V	772 pF	TO-247-2	SiC (Silicon Carbide) Schottky
SMC Diode Solutions S4D10120E	500 mA	No Recovery Time	500 mA 500 mA	Surface Mount	30 µA	10 A	175 °C	-55 °C	DPak	1200 V	1.8 V	772 pF	DPAK (2 Leads + Tab) SC-63 TO-252-3	SiC (Silicon Carbide) Schottky
SMC Diode Solutions S4D10120A	500 mA	No Recovery Time	500 mA 500 mA	Through Hole	30 µA	10 A	175 °C	-55 °C	TO-220AC (TO-220-2)	1200 V	1.8 V	772 pF	TO-220-2	SiC (Silicon Carbide) Schottky
SMC Diode Solutions S4D10120L1	500 mA	No Recovery Time	500 mA 500 mA	Surface Mount	30 µA	10 A	175 °C	-55 °C	5-DFN	1200 V	1.8 V	772 pF	4-VSFN Exposed Pad	SiC (Silicon Carbide) Schottky	8 mm	8 mm

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