1N3064

Obsolete

Microsemi Corporation

DIODE GEN PURP 50V 75MA DO35

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Obsolete

Microsemi Corporation

DIODE GEN PURP 50V 75MA DO35

Technical Specifications

Parameters and characteristics for this part

Specification	1N3064

Current - Average Rectified (Io)	75 mA
Current - Reverse Leakage @ Vr	100 nA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Axial, DO-204AA, DO-7
Reverse Recovery Time (trr)	4 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	DO-35
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	50 V
Voltage - Forward (Vf) (Max) @ If	1 V

DIODE GEN PURP 50V 75MA DO35

Part	Technology	Package / Case	Supplier Device Package	Reverse Recovery Time (trr)	Speed	Speed	Current - Reverse Leakage @ Vr	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]
Microsemi Corporation 1N3064	Standard	Axial, DO-204AA, DO-7	DO-35	4 ns	Any Speed	200 mA	100 nA	Through Hole	1 V	125 °C	-65 C	75 mA	50 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 50 V 75mA Through Hole DO-35

Technical documentation and resources

No documents available