IXYQ40N65C3D1

Active

IXYS

IGBT

Search across all available documentation for this part.

Active

IXYS

IGBT

Technical Specifications

Parameters and characteristics for this part

Specification	IXYQ40N65C3D1

Current - Collector (Ic) (Max) [Max]	80 A
Current - Collector Pulsed (Icm)	180 A
Gate Charge	66 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power - Max [Max]	300 W
Reverse Recovery Time (trr)	40 ns
Supplier Device Package	TO-3P
Switching Energy	830 µJ, 650 µJ
Td (on/off) @ 25°C	23 ns, 110 ns
Test Condition	15 V, 400 V, 30 A, 10 Ohm
Vce(on) (Max) @ Vge, Ic	2.35 V
Voltage - Collector Emitter Breakdown (Max)	650 V

Part	Switching Energy	Test Condition	Supplier Device Package	Reverse Recovery Time (trr)	Current - Collector Pulsed (Icm)	Power - Max [Max]	Td (on/off) @ 25°C	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Vce(on) (Max) @ Vge, Ic	Current - Collector (Ic) (Max) [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge
IXYS IXYQ40N65C3D1	650 µJ 830 µJ	10 Ohm 15 V 30 A 400 V	TO-3P	40 ns	180 A	300 W	23 ns 110 ns	SC-65-3 TO-3P-3	650 V	2.35 V	80 A	Through Hole	-55 °C	175 ░C	66 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT 650 V 80 A 300 W Through Hole TO-3P

Technical documentation and resources

No documents available