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SISS5108DN-T1-GE3

SISS5108DN-T1-GE3

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Vishay Dale

MOSFETS N-CHANNEL 100-V (D-S) MOSFET

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SISS5108DN-T1-GE3

SISS5108DN-T1-GE3

Active
Vishay Dale

MOSFETS N-CHANNEL 100-V (D-S) MOSFET

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Description

General part information

SISS Series

N-Channel 100 V 15.4A (Ta), 55.9A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S

Technical Specifications

Parameters and characteristics for this part

SpecificationSISS5108DN-T1-GE3
Current - Continuous Drain (Id) (Ta)15.4 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On)7.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)23 nC
Input Capacitance (Ciss) (Max)1150 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CasePowerPAK® 1212-8S
Package NamePowerPAK® 1212-8S
Power Dissipation (Max)65.7 W, 5 W
Rds On (Max)10.5 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

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CAD

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Documents

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