Specification	IPB65R310CFDATMA2

Current - Continuous Drain (Id) (Tc)	11.4 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	41 nC
Input Capacitance (Ciss) (Max)	1100 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	PG-TO263-3
Power Dissipation (Max)	104.2 W
Rds On (Max)	310 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4.5 V

IPB65R310 Series

Part	Vgs(th) (Max)	FET Type	Gate Charge (Max)	Qualification	Drain to Source Voltage (Vdss)	Grade	Current - Continuous Drain (Id) (Tc)	Package Name	Package / Case	Vgs (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Rds On (Max)
INFINEON IPB65R310CFDAATMA1	4.5 V	N-Channel	41 nC	AEC-Q101	650 V	Automotive	11.4 A	PG-TO263-3	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	Surface Mount	10 V	-40 °C	150 °C	MOSFET (Metal Oxide)	1110 pF	104.2 W	310 mOhm
INFINEON IPB65R310CFDATMA1	4.5 V	N-Channel	41 nC		650 V		11.4 A	PG-TO263-3	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	Surface Mount	10 V	-55 °C	150 °C	MOSFET (Metal Oxide)	1100 pF	104.2 W	310 mOhm
INFINEON IPB65R310CFDATMA2	4.5 V	N-Channel	41 nC		650 V		11.4 A	PG-TO263-3	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	Surface Mount	10 V	-55 °C	150 °C	MOSFET (Metal Oxide)	1100 pF	104.2 W	310 mOhm

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