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PBSS4160T-QR

PBSS4160T-QR

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Nexperia USA Inc.

60 V, 1 A NPN LOW VCESAT (BISS) TRANSISTOR

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PBSS4160T-QR

PBSS4160T-QR

Active
Nexperia USA Inc.

60 V, 1 A NPN LOW VCESAT (BISS) TRANSISTOR

Find alt

Description

General part information

PBSS4160T-Q Series

NPN low VCEsattransistor in a small SOT23 plastic package. PNP complement: PBSS5160T-Q.

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS4160T-QR
Current - Collector (Ic) (Max)0.9 mA
Current - Collector Cutoff (Max)100 nA
DC Current Gain (hFE) (Min)250
Frequency - Transition220 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-236-3, SOT-23-3, SC-59
Package NameTO-236AB
Power - Max270 mW
QualificationAEC-Q101
Transistor TypeNPN
Vce Saturation (Max)250 mV
Voltage - Collector Emitter Breakdown (Max)60 V

Pricing

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CAD

3D models and CAD resources for this part