Specification	SSM6J771G,LF

Current - Continuous Drain (Id) (Ta)	5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	8.5 V
FET Type	P-Channel
Gate Charge (Max)	9.8 nC
Input Capacitance (Ciss) (Max)	870 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	WLCSP, 6-UFBGA
Power Dissipation (Max)	1.2 W
Rds On (Max)	31 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.2 V

SSM6J771 Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, P-ch MOSFET, -20 V, -5.0 A, 0.035 Ω@4.5V, WCSP6C

Part	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Power Dissipation (Max)	Vgs(th) (Max)	Technology	FET Type	Mounting Type	Package / Case	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Rds On (Max)	Vgs (Max)	Operating Temperature	Current - Continuous Drain (Id) (Ta)	Input Capacitance (Ciss) (Max)
Toshiba Semiconductor and Storage SSM6J771G,LF	8.5 V	2.5 V	1.2 W	1.2 V	MOSFET (Metal Oxide)	P-Channel	Surface Mount	6-UFBGA WLCSP	9.8 nC	20 V	31 mOhm	12 V	150 °C	5 A	870 pF

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