Specification	IRF7580MTRPBF

Current - Continuous Drain (Id) (Tc)	114 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	180 nC
Input Capacitance (Ciss) (Max)	6510 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	DirectFET™ Isometric ME
Package Name	DirectFET™ Isometric ME
Power Dissipation (Max)	115 W
Rds On (Max)	3.6 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.7 V

IRF7580 Series

Part	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Vgs (Max)	Rds On (Max)	Technology	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Package Name	Mounting Type	Power Dissipation (Max)	Package / Case	Gate Charge (Max)
INFINEON IRF7580MTRPBF	114 A	3.7 V	6510 pF	60 V	-55 °C	175 °C	N-Channel	20 V	3.6 mOhm	MOSFET (Metal Oxide)	6 V	10 V	DirectFET™ Isometric ME	Surface Mount	115 W	DirectFET™ Isometric ME	180 nC
INFINEON IRF7580MTRPBF	114 A	3.7 V	6510 pF	60 V	-55 °C	175 °C	N-Channel	20 V	3.6 mOhm	MOSFET (Metal Oxide)	6 V	10 V	DirectFET™ Isometric ME	Surface Mount	115 W	DirectFET™ Isometric ME	180 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources