Specification	SI6435ADQ-T1-GE3

Current - Continuous Drain (Id) (Ta)	4.7 A
Drain to Source Voltage (Vdss)	30 V
FET Type	P-Channel
Gate Charge (Max)	20 nC
Mounting Type	Surface Mount
Package Length	0.173 in
Package Name	8-TSSOP
Package Width	4.4 mm
Rds On (Max)	30 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	1 V

SI6435 Series

Part	Package Length	Package Name	Package Width	Mounting Type	Gate Charge (Max)	FET Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Rds On (Max)	Current - Continuous Drain (Id) (Ta)	Technology
Vishay Dale SI6435ADQ-T1-GE3	0.173 in	8-TSSOP	4.4 mm	Surface Mount	20 nC	P-Channel	30 V	1 V	30 mOhm	4.7 A	MOSFET (Metal Oxide)

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