Specification	SSM6N40TU,LF

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Ta)	1.6 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
FET Feature Drive Voltage	4 V
Gate Charge (Max)	5.1 nC
Input Capacitance (Ciss) (Max)	180 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	Flat Leads, 6-SMD
Package Name	UF6
Power - Max (Ta)	500 mW
Rds On (Max)	122 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.6 V

SSM6N40TU Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 30 V, 1.6 A, 0.122 Ω@10V, SOT-363F(UF6)

Part	Gate Charge (Max)	Power - Max (Ta)	Technology	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Package / Case	Current - Continuous Drain (Id) (Ta)	Input Capacitance (Ciss) (Max)	Package Name	FET Feature	FET Feature Drive Voltage	Channel Count	Configuration	Configuration - Features	Mounting Type	Rds On (Max)	Operating Temperature
Toshiba Semiconductor and Storage SSM6N40TU,LF	5.1 nC	500 mW	MOSFET (Metal Oxide)	30 V	2.6 V	6-SMD Flat Leads	1.6 A	180 pF	UF6	Logic Level Gate	4 V	2	N-Channel	Dual	Surface Mount	122 mOhm	150 °C

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