Specification	SI3586DV-T1-GE3

Configuration	N, P-Channel
Current - Continuous Drain (Id) (Maximum)	2.1 A
Current - Continuous Drain (Id) (Typical)	2.9 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Max)	6 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Package Name	6-TSOP
Power - Max	830 mW
Rds On (Max)	60 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	1.1 V

SI3586 Series

Part	Current - Continuous Drain (Id) (Typical)	Current - Continuous Drain (Id) (Maximum)	FET Feature	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Package / Case	Technology	Package Name	Rds On (Max)	Power - Max	Configuration	Mounting Type	Drain to Source Voltage (Vdss)
Vishay Dale SI3586DV-T1-GE3	2.9 A	2.1 A	Logic Level Gate	1.1 V	-55 °C	150 °C	6 nC	SOT-23-6 Thin TSOT-23-6	MOSFET (Metal Oxide)	6-TSOP	60 mOhm	830 mW	N P-Channel	Surface Mount	20 V

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