Description
General part information
IRF1407 Series
The IRF1407PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this HEXFET® power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | IRF1407PBF |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 130 A |
| Drain to Source Voltage (Vdss) | 75 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 250 nC |
| Input Capacitance (Ciss) (Max) | 5600 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-220-3 |
| Package Name | TO-220AB |
| Power Dissipation (Max) | 330 W |
| Rds On (Max) | 7.8 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
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