TS27L2IN
ObsoleteIC CMOS 2 CIRCUIT 8MINI DIP
Deep-Dive with AI
Search across all available documentation for this part.
TS27L2IN
ObsoleteIC CMOS 2 CIRCUIT 8MINI DIP
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | TS27L2IN |
|---|---|
| Amplifier Type | CMOS |
| Current - Input Bias | 1 pA |
| Current - Output / Channel | 45 mA |
| Current - Supply | 10 µA |
| Gain Bandwidth Product | 100 kHz |
| Mounting Type | Through Hole |
| Number of Circuits | 2 |
| Operating Temperature [Max] | 125 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 0.3 in |
| Package / Case | 8-DIP |
| Package / Case | 7.62 mm |
| Slew Rate | 0.04 V/µs |
| Supplier Device Package | 8-Mini DIP |
| Voltage - Input Offset | 1.1 mV |
| Voltage - Supply Span (Max) [Max] | 16 V |
| Voltage - Supply Span (Min) [Min] | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
TS27L2 Series
These devices are low cost, low power dual operational amplifiers designed to operate with single or dual supplies. These operational amplifiers use the ST silicon gate CMOS process allowing an excellent consumption-speed ratio. These series are ideally suited for low consumption applications.
Three power consumptions are available allowing to have always the best consumption-speed ratio:ICC= 10µA/amp.: TS27L2 (very low power)ICC= 150µA/amp.: TS27M2 (low power)ICC= 1mA/amp.: TS272 (standard)
These CMOS amplifiers offer very high input impedance and extremely low input currents. The major advantage versus JFET devices is the very low input currents drift with temperature (see figure 2).
Documents
Technical documentation and resources