PBSS9110T-QR
ActiveNexperia USA Inc.
BIPOLAR TRANSISTORS - BJT 100 V, 1 A PNP LOW VCESAT (BISS) TRANSISTOR
PBSS9110T-QR
ActiveNexperia USA Inc.
BIPOLAR TRANSISTORS - BJT 100 V, 1 A PNP LOW VCESAT (BISS) TRANSISTOR
Description
General part information
PBSS9110T-Q Series
PNP low VCEsattransistor in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
Technical Specifications
Parameters and characteristics for this part
| Specification | PBSS9110T-QR |
|---|---|
| Current - Collector (Ic) (Max) | 1 A |
| Current - Collector Cutoff (Max) | 100 nA |
| DC Current Gain (hFE) (Min) | 150 |
| Frequency - Transition | 100 MHz |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | TO-236AB |
| Power - Max | 300 mW |
| Qualification | AEC-Q101 |
| Transistor Type | PNP |
| Vce Saturation (Max) | 320 mV |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
PBSS9110T-QR Datasheet (PDF)
Nexperia package poster
Reel pack for SMD, 7"; Q3/T4 product orientation
Reflow soldering profile
Wave soldering profile
plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body
Questions about package outline drawings
plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body
PBSS9110T-Q Nexperia Product Reliability