Specification	SSM3K2615R,LF

Current - Continuous Drain (Id) (Ta)	2 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	3.3 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Grade	Automotive
Input Capacitance (Ciss) (Max)	150 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3 Flat Leads
Package Name	SOT-23F
Power Dissipation (Max)	1 W
Qualification	AEC-Q101
Rds On (Max)	300 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2 V

SSM3K2615R Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 60 V, 2.0 A, 0.3 Ω@10V, SOT-23F

Part	Mounting Type	Package Name	Grade	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Qualification	Operating Temperature	Input Capacitance (Ciss) (Max)	Package / Case	Technology	Rds On (Max)	Power Dissipation (Max)	FET Type	Vgs(th) (Max)	Vgs (Max)	Current - Continuous Drain (Id) (Ta)
Toshiba Semiconductor and Storage SSM3K2615R,LF	Surface Mount	SOT-23F	Automotive	60 V	3.3 V	10 V	AEC-Q101	150 °C	150 pF	SOT-23-3 Flat Leads	MOSFET (Metal Oxide)	300 mOhm	1 W	N-Channel	2 V	20 V	2 A

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