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SCT30N120H - H2PAK

SCT30N120H

Active
STMicroelectronics

SILICON CARBIDE POWER MOSFET 1200 V, 45 A, 90 MOHM (TYP. TJ = 150 C) IN AN H2PAK-2 PACKAGE

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SCT30N120H - H2PAK

SCT30N120H

Active
STMicroelectronics

SILICON CARBIDE POWER MOSFET 1200 V, 45 A, 90 MOHM (TYP. TJ = 150 C) IN AN H2PAK-2 PACKAGE

Deep-Dive with AI

Documents+25

Technical Specifications

Parameters and characteristics for this part

SpecificationSCT30N120H
Drain to Source Voltage (Vdss)1200 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs105 nC
Input Capacitance (Ciss) (Max) @ Vds1700 pF
Mounting TypeSurface Mount
Operating Temperature [Max]200 C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]270 W
Rds On (Max) @ Id, Vgs100 mOhm
Supplier Device PackageH2Pak-2
Vgs (Max) [Max]25 V
Vgs (Max) [Min]-10 V
Vgs(th) (Max) @ Id3.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 23.35
10$ 21.54
25$ 20.57
100$ 18.39
250$ 17.54
500$ 16.70
Digi-Reel® 1$ 23.35
10$ 21.54
25$ 20.57
100$ 18.39
250$ 17.54
500$ 16.70
Tape & Reel (TR) 1000$ 14.97
TMEN/A 1$ 47.54
5$ 44.85
25$ 39.65
100$ 35.61
250$ 33.26

Description

General part information

SCT30N120H Series

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allow designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.