Specification	1N5829

Current - Average Rectified (Io)	25 A
Current - Reverse Leakage	2 mA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction (Max)	150 °C
Operating Temperature - Junction (Min)	-55 °C
Package / Case	Stud, DO-4, DO-203AA
Package Name	DO-4
Speed - Fast Recovery (Maximum)	500 ns
Speed - Fast Recovery (Minimum)	200 mA
Technology	Schottky
Voltage - DC Reverse (Vr) (Max)	20 V
Voltage - Forward (Vf) (Max)	580 mV

1N58 Series

Part	Voltage - Forward (Vf) (Max)	Speed - Fast Recovery (Maximum)	Speed - Fast Recovery (Minimum)	Current - Average Rectified (Io)	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Voltage - DC Reverse (Vr) (Max)	Technology	Mounting Type	Package / Case	Package Name	Current - Reverse Leakage
GeneSiC Semiconductor 1N5830	580 mV	500 ns	200 mA	25 A	150 °C	-55 °C	25 V	Schottky	Chassis Stud Mount	DO-203AA DO-4 Stud	DO-4	2 mA
GeneSiC Semiconductor 1N5829	580 mV	500 ns	200 mA	25 A	150 °C	-55 °C	20 V	Schottky	Chassis Stud Mount	DO-203AA DO-4 Stud	DO-4	2 mA
GeneSiC Semiconductor 1N5829	580 mV	500 ns	200 mA	25 A	150 °C	-55 °C	20 V	Schottky	Chassis Stud Mount	DO-203AA DO-4 Stud	DO-4	2 mA
GeneSiC Semiconductor 1N5830	580 mV	500 ns	200 mA	25 A	150 °C	-55 °C	25 V	Schottky	Chassis Stud Mount	DO-203AA DO-4 Stud	DO-4	2 mA

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