
2SB734-AZ
ActiveRenesas Electronics Corporation
SMALL SIGNAL BIPOLAR TRANS PNP
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2SB734-AZ
ActiveRenesas Electronics Corporation
SMALL SIGNAL BIPOLAR TRANS PNP
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
Specification | 2SB734-AZ |
---|---|
Current - Collector (Ic) (Max) [Max] | 1 A |
Current - Collector Cutoff (Max) [Max] | 100 nA |
DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 135 hFE |
Mounting Type | Through Hole |
Operating Temperature | 150 °C |
Package / Case | 3-SSIP |
Power - Max [Max] | 1 W |
Transistor Type | PNP |
Vce Saturation (Max) @ Ib, Ic | 600 mV |
Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Distributor | Package | Quantity | $ | |
---|---|---|---|---|
Digikey | Bulk | 1015 | $ 0.30 |
2SB734 Series
Bipolar Power Transistors
Part | Mounting Type | Voltage - Collector Emitter Breakdown (Max) [Max] | Transistor Type | Package / Case | Current - Collector Cutoff (Max) [Max] | Current - Collector (Ic) (Max) [Max] | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Operating Temperature | Power - Max [Max] |
---|---|---|---|---|---|---|---|---|---|---|
Renesas Electronics Corporation 2SB734-AZ | Through Hole | 50 V | PNP | 3-SSIP | 100 nA | 1 A | 600 mV | 135 hFE | 150 °C | 1 W |
Description
General part information
2SB734 Series
A wide variety of products are rolled out, for example, for uses at high temperature (up to 175°C applicable), high power, and low Vce (sat), and others.
Documents
Technical documentation and resources
No documents available