IR2304SPBF

Obsolete

EICEDRIVER™ 600 V HALF BRIDGE DRIVER IC WITH TYPICAL 0.078 A SOURCE AND 0.169 A SINK OUTPUT CURRENTS. IT COMES WITH A FUNCTIONAL LEVELSHIFT SOIC 8N PACKAGE AND WORKS WITH IGBTS AND MOSFETS. FEATURES: SHOOT THROUGH PROTECTION

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IR2304SPBF

Obsolete

INFINEON

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Description Specifications Series Pricing CAD Documents

Description

General part information

IR2304 Series

600 V Half Bridge Driver IC with typical 0.29 A source and 0.6 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP (IR2304).

Technical Specifications

Parameters and characteristics for this part

Specification	IR2304SPBF

Channel Type	Independent
Current - Peak Output (Sink)	130 mA
Current - Peak Output (Source)	60 mA
Driven Configuration	Half-Bridge
Fall Time (Typ)	100 ns
Gate Channel	N-Channel
Gate Type	IGBT, MOSFET, N-Channel MOSFET
High Side Voltage - Max (Bootstrap)	600 V
Input Type	Non-Inverting
Logic Voltage - VIH	2.3 V
Logic Voltage - VIL	0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Rise Time (Typ)	200 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

IR2304 Series

Part	Driven Configuration	Operating Temperature (Min)	Operating Temperature (Max)	Gate Channel	Gate Type	Logic Voltage - VIL	Logic Voltage - VIH	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Number of Drivers	Package Length	Package Name	Package Width	Mounting Type	High Side Voltage - Max (Bootstrap)	Input Type	Channel Type	Current - Peak Output (Source)	Current - Peak Output (Sink)	Rise Time (Typ)	Fall Time (Typ)
INFINEON IR2304SPBF	Half-Bridge	-40 °C	150 °C	N-Channel	IGBT MOSFET N-Channel MOSFET	0.8 V	2.3 V	10 VDC	20 V	2	0.154 in	8-SOIC	3.9 mm	Surface Mount	600 V	Non-Inverting	Independent	60 mA	130 mA	200 ns	100 ns
INFINEON IR2304PBF	Half-Bridge	-40 °C	150 °C	N-Channel	IGBT MOSFET N-Channel MOSFET	0.8 V	2.3 V	10 VDC	20 V	2	0.3 in	8-DIP 8-PDIP	7.62 mm	Through Hole	600 V	Non-Inverting	Independent	60 mA	130 mA	200 ns	100 ns
INFINEON IR2304	Half-Bridge	-40 °C	150 °C	N-Channel	IGBT MOSFET N-Channel MOSFET	0.8 V	2.3 V	10 VDC	20 V	2	0.3 in	8-DIP 8-PDIP	7.62 mm	Through Hole	600 V	Non-Inverting	Independent	60 mA	130 mA	200 ns	100 ns
INFINEON IR2304STRPBF	Half-Bridge	-40 °C	150 °C	N-Channel	IGBT MOSFET N-Channel MOSFET	0.8 V	2.3 V	10 VDC	20 V	2	0.154 in	8-SOIC	3.9 mm	Surface Mount	600 V	Non-Inverting	Independent	60 mA	130 mA	200 ns	100 ns
INFINEON IR2304PBF	Half-Bridge	-40 °C	150 °C	N-Channel	IGBT MOSFET N-Channel MOSFET	0.8 V	2.3 V	10 VDC	20 V	2	0.3 in	8-DIP 8-PDIP	7.62 mm	Through Hole	600 V	Non-Inverting	Independent	60 mA	130 mA	200 ns	100 ns

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Gate driver IC MOSFET - EiceDRIVER™ and CoolMOS™ CFD2 Join for High Efficiency in Refrigeration - Bodos Power

Application Note AN-978 HV Floating MOS-Gate Driver ICs