IS66WV25616BLL-55TLI

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ISSI, Integrated Silicon Solution Inc

IC PSRAM 4MBIT PAR 44TSOP II

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ISSI, Integrated Silicon Solution Inc

IC PSRAM 4MBIT PAR 44TSOP II

Technical Specifications

Parameters and characteristics for this part

Specification	IS66WV25616BLL-55TLI

Access Time	55 ns
Memory Format	PSRAM
Memory Interface	Parallel
Memory Organization	256 K
Memory Size	512 kb
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	10.16 mm
Package / Case	10.16 mm
Package / Case	44-TSOP
Supplier Device Package	44-TSOP II
Technology	PSRAM (Pseudo SRAM)
Voltage - Supply [Max]	3.6 V
Voltage - Supply [Min]	2.5 V
Write Cycle Time - Word, Page [custom]	55 ns
Write Cycle Time - Word, Page [custom]	55 ns

IC PSRAM 4MBIT PAR 44TSOP II

Part	Memory Organization	Memory Size	Package / Case	Package / Case	Package / Case	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Memory Type	Memory Format	Technology	Supplier Device Package	Memory Interface	Voltage - Supply [Max]	Voltage - Supply [Min]	Access Time
ISSI, Integrated Silicon Solution Inc IS66WV25616BLL-55TLI	256 K	512 kb	10.16 mm	10.16 mm	44-TSOP	55 ns	55 ns	85 °C	-40 °C	Surface Mount	Volatile	PSRAM	PSRAM (Pseudo SRAM)	44-TSOP II	Parallel	3.6 V	2.5 V	55 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

PSRAM (Pseudo SRAM) Memory IC 4Mbit Parallel 55 ns 44-TSOP II

Technical documentation and resources