Specification	SI3441BDV-T1-GE3

Current - Continuous Drain (Id) (Ta)	2.45 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	8 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Package Name	6-TSOP
Power Dissipation (Max)	860 mW
Rds On (Max)	90 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	850 mV

SI3441 Series

Part	Package Name	Current - Continuous Drain (Id) (Ta)	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Vgs (Max)	Technology	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Vgs(th) (Max)	Rds On (Max)	Gate Charge (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Package / Case
Vishay Dale SI3441BDV-T1-GE3	6-TSOP	2.45 A	-55 °C	150 °C	P-Channel	8 V	MOSFET (Metal Oxide)	860 mW	20 V	Surface Mount	850 mV	90 mOhm	8 nC	2.5 V	4.5 V	SOT-23-6 Thin TSOT-23-6

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