PSMN2R2-25YLC,115

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Nexperia USA Inc.

N-CHANNEL 25 V, 2.4 MΩ LOGIC LEVEL MOSFET IN LFPAK USING NEXTPOWER TECHNOLOGY

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PSMN2R2-25YLC,115

Active

Nexperia USA Inc.

N-CHANNEL 25 V, 2.4 MΩ LOGIC LEVEL MOSFET IN LFPAK USING NEXTPOWER TECHNOLOGY

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Description Specifications Series Pricing CAD Documents

Description

General part information

PSMN2R2-25YLC Series

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN2R2-25YLC,115

Current - Continuous Drain (Id) (Tc)	100 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	39 nC
Input Capacitance (Ciss) (Max)	2542 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-669, SC-100
Package Name	LFPAK56, Power-SO8
Power Dissipation (Max)	106 W
Rds On (Max)	2.4 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	1.95 V

PSMN2R2-25YLC Series

N-channel 25 V, 2.4 mΩ logic level MOSFET in LFPAK using NextPower technology

Part	Input Capacitance (Ciss) (Max)	Rds On (Max)	Vgs(th) (Max)	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Package / Case	Technology	FET Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Package Name
Nexperia USA Inc. PSMN2R2-25YLC,115	2542 pF	2.4 mOhm	1.95 V	20 V	100 A	-55 °C	175 °C	39 nC	SC-100 SOT-669	MOSFET (Metal Oxide)	N-Channel	10 V	4.5 V	Surface Mount	25 V	106 W	LFPAK56 Power-SO8