The HMC414MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 2.2 and 2.8 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +30 dBm of saturated power at 32% PAE from a +5V supply voltage. The amplifier can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/ current control.ApplicationsBLUETOOTHMMDS

Technical Specifications

Parameters and characteristics for this part

Specification	HMC414MS8GE

Current - Supply	300 mA
Frequency (Max)	2.8 GHz
Frequency (Min)	2.2 GHz
Gain	20 dB
Mounting Type	Surface Mount
Noise Figure	7 dB
P1dB	27 dBm
Package Features	Exposed Pad
Package Length	0.118 in
Package Name	8-MSOP, 8-TSSOP, 8-MSOP-EP
Package Width	3 mm
RF Type	Bluetooth
Voltage - Supply (Maximum)	5 V
Voltage - Supply (Minimum)	2.75 V

HMC414 Series

InGaP HBT Power Amplifier SMT, 2.2 - 2.8 GHz

Part	RF Type	Mounting Type	Current - Supply	Gain	Noise Figure	Frequency (Min)	Frequency (Max)	P1dB	Package Length	Package Features	Package Name	Package Width	Voltage - Supply (Maximum)	Voltage - Supply (Minimum)
Analog Devices Inc./Maxim Integrated HMC414MS8GETR	Bluetooth	Surface Mount	300 mA	20 dB	7 dB	2.2 GHz	2.8 GHz	27 dBm	0.118 in	Exposed Pad	8-MSOP 8-MSOP-EP 8-TSSOP	3 mm	5 V	2.75 V
Analog Devices Inc./Maxim Integrated HMC414MS8GE	Bluetooth	Surface Mount	300 mA	20 dB	7 dB	2.2 GHz	2.8 GHz	27 dBm	0.118 in	Exposed Pad	8-MSOP 8-MSOP-EP 8-TSSOP	3 mm	5 V	2.75 V

Pricing

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CAD

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Documents

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Datasheet

HMC414MS8GE | Datasheet