Specification	SQJQ480E-T1_GE3

Current - Continuous Drain (Id) (Tc)	150 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	144 nC, 144 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	8625 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 8 x 8
Package Length	8 mm
Package Name	PowerPAK®
Package Width	8 mm
Power Dissipation (Max)	136 W
Qualification	AEC-Q101
Rds On (Max)	3 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.5 V

SQJQ480 Series

Part	Drive Voltage (Max Rds On, Min Rds On)	Grade	Technology	Drain to Source Voltage (Vdss)	Rds On (Max)	Vgs(th) (Max)	FET Type	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	Qualification	Package Width	Package Name	Package Length	Vgs (Max)	Power Dissipation (Max)	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Package / Case
Vishay Dale SQJQ480E-T1_GE3	10 V	Automotive	MOSFET (Metal Oxide)	80 V	3 mOhm	3.5 V	N-Channel	8625 pF	150 A	AEC-Q101	8 mm	PowerPAK®	8 mm	20 V	136 W	144 nC 144 nC	-55 °C	175 °C	Surface Mount	PowerPAK® 8 x 8

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