2N3397 TIN/LEAD
ObsoleteCentral Semiconductor Corp
BIPOLAR TRANSISTORS - BJT NPN 25VCBO 25VCEO 5.0VEBO 100MA 360MW
2N3397 TIN/LEAD
ObsoleteCentral Semiconductor Corp
BIPOLAR TRANSISTORS - BJT NPN 25VCBO 25VCEO 5.0VEBO 100MA 360MW
Description
General part information
2N3397 Series
BIPOLAR TRANSISTORS - BJT NPN 25VCBO 25VCEO 5.0VEBO 100MA 360MW
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N3397 TIN/LEAD |
|---|---|
| Current - Collector Cutoff (Max) | 100 nA |
| DC Current Gain (hFE) (Min) | 55 |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Package Name | TO-92-3 |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
No documents available