Specification	SI7104DN-T1-E3

Current - Continuous Drain (Id) (Tc)	35 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	70 nC
Input Capacitance (Ciss) (Max)	2800 pF, 2800 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	52 W, 3.8 W
Rds On (Max)	3.7 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.8 V

SI7104 Series

Part	Package / Case	Vgs (Max)	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Power Dissipation (Max)	Vgs(th) (Max)	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Drain to Source Voltage (Vdss)	Technology	FET Type	Input Capacitance (Ciss) (Max)
Vishay Dale SI7104DN-T1-GE3	PowerPAK® 1212-8	12 V	70 nC	35 A	3.7 mOhm	2.5 V	4.5 V	3.8 W 52 W	1.8 V	Surface Mount	-55 °C	150 °C	PowerPAK® 1212-8	12 V	MOSFET (Metal Oxide)	N-Channel	2800 pF 2800 pF
Vishay Dale SI7104DN-T1-E3	PowerPAK® 1212-8	12 V	70 nC	35 A	3.7 mOhm	2.5 V	4.5 V	3.8 W 52 W	1.8 V	Surface Mount	-55 °C	150 °C	PowerPAK® 1212-8	12 V	MOSFET (Metal Oxide)	N-Channel	2800 pF 2800 pF

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