Specification	RN1106ACT(TPL3)

Current - Collector (Ic) (Max)	0.08 A
Current - Collector Cutoff (Max)	500 nA
DC Current Gain (hFE) (Min)	80
Mounting Type	Surface Mount
Package / Case	SC-101, SOT-883
Package Name	CST3
Power - Max	100 mW
Resistor - Base (R1) Resistance	4.7 kOhm
Resistor - Emitter Base (R2)	47 kOhm
Transistor Type	Pre-Biased, NPN
Vce Saturation (Max)	150 mV
Voltage - Collector Emitter Breakdown (Max)	50 V

RN1106 Series

Bipolar Transistors, NPN Bias Resistor Built-in Transistors (BRT), 4.7 kΩ/47 kΩ, SOT-416(SSM)

Part	Power - Max	Frequency - Transition	Current - Collector (Ic) (Max)	Transistor Type	Vce Saturation (Max)	DC Current Gain (hFE) (Min)	Resistor - Base (R1) Resistance	Current - Collector Cutoff (Max)	Voltage - Collector Emitter Breakdown (Max)	Package Name	Resistor - Emitter Base (R2)	Package / Case	Mounting Type
Toshiba Semiconductor and Storage RN1106,LF(CT	100 mW	250 MHz	0.1 mA	NPN Pre-Biased	300 mV	80	4.7 kOhm	500 nA	50 V	SSM	47 kOhm	SC-75 SOT-416	Surface Mount
Toshiba Semiconductor and Storage RN1106ACT(TPL3)	100 mW		0.08 A	NPN Pre-Biased	150 mV	80	4.7 kOhm	500 nA	50 V	CST3	47 kOhm	SC-101 SOT-883	Surface Mount
Toshiba Semiconductor and Storage RN1106MFV,L3F(CT	150 mW		0.1 mA	NPN Pre-Biased	300 mV	80	4.7 kOhm	500 nA	50 V	VESM	47 kOhm	SOT-723	Surface Mount

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