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DS1265AB-100+ - 36-DIP Module (600 mil), 36-EDIP

DS1265AB-100+

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Analog Devices Inc./Maxim Integrated

IC NVSRAM 8MBIT PARALLEL 36EDIP

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DS1265AB-100+ - 36-DIP Module (600 mil), 36-EDIP

DS1265AB-100+

Active
Analog Devices Inc./Maxim Integrated

IC NVSRAM 8MBIT PARALLEL 36EDIP

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Technical Specifications

Parameters and characteristics commom to parts in this series

SpecificationDS1265AB-100+DS1265AB Series
Access Time100 ns70 - 100 ns
Memory FormatNVSRAMNVSRAM
Memory InterfaceParallelParallel
Memory Organization [custom]1 M1 M
Memory Organization [custom]8 bits8 bits
Memory Size1024 KB1024 KB
Memory TypeNon-VolatileNon-Volatile
Mounting TypeThrough HoleThrough Hole
Operating Temperature [Max]70 °C70 - 85 °C
Operating Temperature [Min]0 °C-40 - 0 °C
Package / Case36-DIP Module36-DIP Module
Package / Case0.61 ", 15.49 mm0.61 - 15.49 "
Supplier Device Package36-EDIP36-EDIP
TechnologyNVSRAM (Non-Volatile SRAM)NVSRAM (Non-Volatile SRAM)
Voltage - Supply [Max]5.25 V5.25 V
Voltage - Supply [Min]4.75 V4.75 V
Write Cycle Time - Word, Page [custom]100 ns100 ns
Write Cycle Time - Word, Page [custom]100 ns100 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

DS1265AB Series

IC NVSRAM 8MBIT PARALLEL 36EDIP

PartMemory TypeSupplier Device PackageAccess TimeMemory SizePackage / CasePackage / CaseMemory FormatMemory InterfaceMounting TypeTechnologyMemory Organization [custom]Memory Organization [custom]Voltage - Supply [Min]Voltage - Supply [Max]Operating Temperature [Max]Operating Temperature [Min]Write Cycle Time - Word, Page [custom]Write Cycle Time - Word, Page [custom]
Analog Devices Inc./Maxim Integrated
DS1265AB-70
Non-Volatile
36-EDIP
70 ns
1024 KB
36-DIP Module
0.61 ", 15.49 mm
NVSRAM
Parallel
Through Hole
NVSRAM (Non-Volatile SRAM)
1 M
8 bits
4.75 V
5.25 V
70 °C
0 °C
Analog Devices Inc./Maxim Integrated
DS1265AB-100
Non-Volatile
36-EDIP
100 ns
1024 KB
36-DIP Module
0.61 ", 15.49 mm
NVSRAM
Parallel
Through Hole
NVSRAM (Non-Volatile SRAM)
1 M
8 bits
4.75 V
5.25 V
70 °C
0 °C
100 ns
100 ns
Analog Devices Inc./Maxim Integrated
DS1265AB-100+
Non-Volatile
36-EDIP
100 ns
1024 KB
36-DIP Module
0.61 ", 15.49 mm
NVSRAM
Parallel
Through Hole
NVSRAM (Non-Volatile SRAM)
1 M
8 bits
4.75 V
5.25 V
70 °C
0 °C
100 ns
100 ns
Analog Devices Inc./Maxim Integrated
DS1265AB-70IND
Non-Volatile
36-EDIP
70 ns
1024 KB
36-DIP Module
0.61 ", 15.49 mm
NVSRAM
Parallel
Through Hole
NVSRAM (Non-Volatile SRAM)
1 M
8 bits
4.75 V
5.25 V
85 °C
-40 °C
Analog Devices Inc./Maxim Integrated
DS1265AB-70IND+
Non-Volatile
36-EDIP
70 ns
1024 KB
36-DIP Module
0.61 ", 15.49 mm
NVSRAM
Parallel
Through Hole
NVSRAM (Non-Volatile SRAM)
1 M
8 bits
4.75 V
5.25 V
85 °C
-40 °C
Analog Devices Inc./Maxim Integrated
DS1265AB-70+
Non-Volatile
36-EDIP
70 ns
1024 KB
36-DIP Module
0.61 ", 15.49 mm
NVSRAM
Parallel
Through Hole
NVSRAM (Non-Volatile SRAM)
1 M
8 bits
4.75 V
5.25 V
70 °C
0 °C

Description

General part information

DS1265AB Series

NVSRAM (Non-Volatile SRAM) Memory IC 8Mbit Parallel 100 ns 36-EDIP

Documents

Technical documentation and resources

No documents available