Part	Rds On (Max)	Package Name	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Power Dissipation (Max)	Package / Case	Qualification	FET Type	Vgs(th) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max)	Grade	Mounting Type	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Technology
NXP USA Inc. BUK754R7-60E,127	4.6 mOhm	TO-220AB	20 V	-55 °C	175 °C	100 A	234 W	TO-220-3	AEC-Q101	N-Channel	4 V	10 V	6230 pF	Automotive	Through Hole	60 V	82 nC	MOSFET (Metal Oxide)
NXP USA Inc. BUK7513-75B,127
NXP USA Inc. BUK75150-55A,127	150 mOhm	TO-220AB	20 V	-55 °C	175 °C	11 A	36 W	TO-220-3	AEC-Q101	N-Channel	4 V	10 V	322 pF	Automotive	Through Hole	55 V	5.5 nC	MOSFET (Metal Oxide)
NXP USA Inc. BUK7535-100A,127
NXP USA Inc. BUK7524-55A,127	24 mOhm	TO-220AB	20 V	-55 °C	175 °C	47 A	106 W	TO-220-3	AEC-Q101	N-Channel	4 V	10 V	1310 pF	Automotive	Through Hole	55 V		MOSFET (Metal Oxide)
NXP USA Inc. BUK752R7-30B,127	2.7 mOhm	TO-220AB	20 V	-55 °C	175 °C	75 A	300 W	TO-220-3	AEC-Q101	N-Channel	4 V	10 V	6212 pF	Automotive	Through Hole	30 V	91 nC	MOSFET (Metal Oxide)
NXP USA Inc. BUK753R1-40B,127	3.1 mOhm	TO-220AB	20 V	-55 °C	175 °C	75 A	300 W	TO-220-3	AEC-Q101	N-Channel	4 V	10 V	6808 pF	Automotive	Through Hole	40 V	94 nC	MOSFET (Metal Oxide)
NXP USA Inc. BUK7506-55B,127	6 mOhm 6 mOhm	TO-220AB	20 V	-55 °C	175 °C	75 A	254 W	TO-220-3	AEC-Q101	N-Channel	4 V	10 V	5100 pF	Automotive	Through Hole	55 V	64 nC	MOSFET (Metal Oxide)
NXP USA Inc. BUK751R6-30E,127	1.6 mOhm	TO-220AB	20 V	-55 °C	175 °C	120 A	349 W	TO-220-3		N-Channel	4 V	10 V	11960 pF		Through Hole	30 V	154 nC	MOSFET (Metal Oxide)
NXP USA Inc. BUK7528-100A,127

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BUK7535-100A,127 | Datasheet