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DMN3732U-7 - SOT-23-3

DMN3732U-7

Active
Diodes Inc

30V N-CHANNEL ENHANCEMENT MODE MOSFET

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Search across all available documentation for this part.

DocumentsPackage PDFDatasheet+2
DMN3732U-7 - SOT-23-3

DMN3732U-7

Active
Diodes Inc

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

DocumentsPackage PDFDatasheet+2

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN3732U-7
Current - Continuous Drain (Id) @ 25°C1 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.8 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]0.9 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]40.8 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]420 mW
Rds On (Max) @ Id, Vgs460 mOhm
Supplier Device PackageSOT-23-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max) @ Id950 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 3000$ 0.04
6000$ 0.04
9000$ 0.03
15000$ 0.03
21000$ 0.03
30000$ 0.03
75000$ 0.03
150000$ 0.02
300000$ 0.02

Description

General part information

DMN3732U Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.