PSMN1R9-40YSDX

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Nexperia USA Inc.

N-CHANNEL 40 V, 1.9 MΩ, 200 A STANDARD LEVEL MOSFET IN LFPAK56 USING NEXTPOWER-S3 SCHOTTKY-PLUS TECHNOLOGY

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PSMN1R9-40YSDX

Active

Nexperia USA Inc.

N-CHANNEL 40 V, 1.9 MΩ, 200 A STANDARD LEVEL MOSFET IN LFPAK56 USING NEXTPOWER-S3 SCHOTTKY-PLUS TECHNOLOGY

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Description Specifications Series Pricing CAD Documents

Description

General part information

PSMN1R9-40YSD Series

200 A, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN1R9-40YSDX

Current - Continuous Drain (Id) (Tc)	200 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Gate Charge (Max)	80 nC, 80 nC
Input Capacitance (Ciss) (Max)	6198 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-669, SC-100
Package Name	LFPAK56, Power-SO8
Power Dissipation (Max)	194 W
Rds On (Max)	1.9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.6 V

PSMN1R9-40YSD Series

N-channel 40 V, 1.9 mΩ, 200 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology

Part	Mounting Type	Rds On (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) (Tc)	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	FET Type	Input Capacitance (Ciss) (Max)	Package / Case	Vgs (Max)	Gate Charge (Max)	FET Feature	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Technology
Nexperia USA Inc. PSMN1R9-40YSDX	Surface Mount	1.9 mOhm	10 V	200 A	LFPAK56 Power-SO8	-55 °C	175 °C	3.6 V	N-Channel	6198 pF	SC-100 SOT-669	20 V	80 nC 80 nC	Schottky Diode (Body)	194 W	40 V	MOSFET (Metal Oxide)