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FFxMR12W2M1

FF4MR12W2M1HB11BPSA1

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INFINEON

SILICON CARBIDE MOSFET, HALF BRIDGE, N CHANNEL, 170 A, 1.2 KV, 0.004 OHM, MODULE

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FFxMR12W2M1

FF4MR12W2M1HB11BPSA1

Active
INFINEON

SILICON CARBIDE MOSFET, HALF BRIDGE, N CHANNEL, 170 A, 1.2 KV, 0.004 OHM, MODULE

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Description

General part information

FF4MR12 Series

EasyDUAL™ 2BCoolSiC™ MOSFEThalf-bridge module 1200 V, 4 mΩ G1 with integrated NTC temperature sensor andPressFIT Contact Technology.

Technical Specifications

Parameters and characteristics for this part

SpecificationFF4MR12W2M1HB11BPSA1
Channel Count2
ConfigurationN-Channel
Configuration - FeaturesHalf Bridge
Current - Continuous Drain (Id) (Tj)170 A
Drain to Source Voltage (Vdss)1200 V
Gate Charge (Max)594 nC
Input Capacitance (Ciss) (Max)17600 pF
Mounting TypeChassis Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-40 °C
Package / CaseModule
Package NameModule
Rds On (Max)4 mOhm
TechnologySilicon Carbide (SiC)
Vgs(th) (Max)5.15 V

Pricing

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