
HMC-ALH102-SX
ActiveWIDEBAND LOW NOISE AMPLIFIER CHIP, 2 - 20 GHZ

HMC-ALH102-SX
ActiveWIDEBAND LOW NOISE AMPLIFIER CHIP, 2 - 20 GHZ
Description
General part information
HMC-ALH102-DIE Series
The HMC-ALH102 is a GaAs MMIC HEMT Low Noise Distributed Amplifier die which operates between 2 and 20 GHz. The amplifier provides 11.6 dB of gain at 10 GHz, <3.5 dB noise figure and +10 dBm of output power at 1 dB gain compression while requiring only 55 mA from a +2V supply voltage. The HMC-ALH102 amplifier is ideal for integration into Multi-Chip-Modules (MCMs) due to its small size.ApplicationsWideband Communications ReceiversSurveillance SystemsPoint-to-Point RadiosPoint-to-Multi-Point RadiosMilitary & SpaceTest Instrumentation
Technical Specifications
Parameters and characteristics for this part
| Specification | HMC-ALH102-SX |
|---|---|
| Current - Supply | 55 mA |
| Frequency (Max) | 20 GHz |
| Frequency (Min) | 2 GHz |
| Gain | 10 dB |
| Mounting Type | Surface Mount |
| Noise Figure | 2.5 dB |
| P1dB | 10 dBm |
| Package / Case | Die |
| Package Name | Die |
| RF Type | General Purpose |
| Test Frequency | 10 GHz |
| Voltage - Supply | 2 V |
Pricing
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CAD
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Documents
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