Specification	IPB65R190CFDATMA2

Current - Continuous Drain (Id) (Tc)	17.5 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	68 nC
Input Capacitance (Ciss) (Max)	1850 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	PG-TO263-3
Power Dissipation (Max)	151 W
Rds On (Max)	190 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4.5 V

IPB65R190 Series

Part	Mounting Type	Package Name	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max)	Vgs(th) (Max)	Technology	Package / Case	FET Type	Current - Continuous Drain (Id) (Tc)	Vgs (Max)	Drain to Source Voltage (Vdss)	Qualification	Grade
INFINEON IPB65R190CFDATMA2	Surface Mount	PG-TO263-3	1850 pF	151 W	68 nC	-55 °C	150 °C	10 V	190 mOhm	4.5 V	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	17.5 A	20 V	650 V
INFINEON IPB65R190CFDAATMA1	Surface Mount	PG-TO263-3	1850 pF	151 W	68 nC	-40 °C	150 °C	10 V	190 mOhm	4.5 V	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	17.5 A	20 V	650 V	AEC-Q101	Automotive
INFINEON IPB65R190CFD7AATMA1	Surface Mount	PG-TO263-3	1291 pF	77 W	28 nC	-40 °C	150 °C		190 mOhm 190 mOhm	4.5 V	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	14 A	20 V	650 V	AEC-Q101	Automotive

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