Specification	SI5857DU-T1-E3

Current - Continuous Drain (Id) (Tc)	6 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	4.5 V
FET Feature	Schottky Diode (Isolated)
FET Type	P-Channel
Gate Charge (Max)	17 nC
Input Capacitance (Ciss) (Max)	480 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® ChipFET™ Single
Package Name	PowerPAK® ChipFET™ Single
Power Dissipation (Max)	2.3 W, 10.4 W
Rds On (Max)	58 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.5 V

SI5857 Series

Part	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Vgs (Max)	Rds On (Max)	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Package Name	Power Dissipation (Max)	Mounting Type	FET Type	Package / Case	FET Feature	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Technology
Vishay Dale SI5857DU-T1-E3	-55 °C	150 °C	17 nC	12 V	58 mOhm	1.5 V	480 pF	6 A	20 V	PowerPAK® ChipFET™ Single	2.3 W 10.4 W	Surface Mount	P-Channel	PowerPAK® ChipFET™ Single	Schottky Diode (Isolated)	2.5 V	4.5 V	MOSFET (Metal Oxide)

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