Specification	SIHU6N62E-GE3

Current - Continuous Drain (Id) (Tc)	6 A
Drain to Source Voltage (Vdss)	620 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	34 nC
Input Capacitance (Ciss) (Max)	578 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-251-3 Short Leads, TO-251AA, IPAK
Package Name	IPAK (TO-251)
Power Dissipation (Max)	78 W
Rds On (Max)	900 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4 V

SIHU6 Series

Part	Package / Case	FET Type	Gate Charge (Max)	Vgs (Max)	Technology	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Rds On (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max)
Vishay Dale SIHU6N65E-GE3	IPAK TO-251-3 Long Leads TO-251AB	N-Channel	48 nC 48 nC	30 V	MOSFET (Metal Oxide)	Through Hole	10 V	820 pF	7 A	-55 °C	150 °C	IPAK (TO-251)	600 mOhm	78 W	650 V	4 V
Vishay Dale SIHU6N80E-GE3	IPAK TO-251-3 Long Leads TO-251AB	N-Channel	44 nC 44 nC	30 V	MOSFET (Metal Oxide)	Through Hole	10 V	827 pF	5.4 A	-55 °C	150 °C	IPAK (TO-251)	940 mOhm	78 W	800 V	4 V
Vishay Dale SIHU6N62E-GE3	IPAK TO-251-3 Short Leads TO-251AA	N-Channel	34 nC	30 V	MOSFET (Metal Oxide)	Through Hole	10 V	578 pF	6 A	-55 °C	150 °C	IPAK (TO-251)	900 mOhm	78 W	620 V	4 V

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