IPD160N04LGBTMA1

Obsolete

Infineon Technologies

MOSFET N-CH 40V 30A TO252-3

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Obsolete

Infineon Technologies

MOSFET N-CH 40V 30A TO252-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPD160N04LGBTMA1

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1200 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	31 W
Rds On (Max) @ Id, Vgs	16 mOhm
Supplier Device Package	PG-TO252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Mounting Type	Current - Continuous Drain (Id) @ 25°C	FET Type	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max)	Package / Case	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]
Infineon Technologies IPD160N04LGBTMA1	PG-TO252-3	4.5 V 10 V	1200 pF	16 mOhm	2 V	Surface Mount	30 A	N-Channel	40 V	MOSFET (Metal Oxide)	31 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	-55 °C	175 ░C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 40 V 30A (Tc) 31W (Tc) Surface Mount PG-TO252-3

Technical documentation and resources