Specification	IRFBE30

Current - Continuous Drain (Id) (Tc)	4.1 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	78 nC
Input Capacitance (Ciss) (Max)	1300 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220AB
Power Dissipation (Max)	125 W
Rds On (Max)	3 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IRFBE30 Series

Part	Drain to Source Voltage (Vdss)	Vgs (Max)	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Package / Case	Package Name	Technology	Gate Charge (Max)	Power Dissipation (Max)	FET Type	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)
Vishay Dale IRFBE30PBF-BE3	800 V	20 V	3 Ohm	-55 °C	150 °C	4.1 A	TO-220-3	TO-220AB	MOSFET (Metal Oxide)	78 nC	125 W	N-Channel	1300 pF	4 V	Through Hole
Vishay Dale IRFBE30	800 V	20 V	3 Ohm	-55 °C	150 °C	4.1 A	TO-220-3	TO-220AB	MOSFET (Metal Oxide)	78 nC	125 W	N-Channel	1300 pF	4 V	Through Hole	10 V
Vishay Dale IRFBE30STRL	800 V	20 V	3 Ohm	-55 °C	150 °C	4.1 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263 (D2PAK)	MOSFET (Metal Oxide)	78 nC	125 W	N-Channel	1300 pF	4 V	Surface Mount	10 V

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