Specification	IPN60R1K0CEATMA1

Current - Continuous Drain (Id) (Tc)	6.8 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	13 nC
Input Capacitance (Ciss) (Max)	280 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package / Case	TO-261AA, TO-261-4
Package Name	PG-SOT223-3
Power Dissipation (Max)	5 W
Rds On (Max)	1 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.5 V

IPN60R1 Series

Part	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Max)	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Rds On (Max)	Vgs(th) (Max)	Technology	Mounting Type	Power Dissipation (Max)	Vgs (Max)	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Package / Case
INFINEON IPN60R1K0CEATMA1	10 V	13 nC	N-Channel	-40 °C	150 °C	PG-SOT223-3	1 Ohm	3.5 V	MOSFET (Metal Oxide)	Surface Mount	5 W	20 V	280 pF	6.8 A	600 V	TO-261-4 TO-261AA
INFINEON IPN60R1K5CEATMA1	10 V	9.4 nC	N-Channel	-40 °C	150 °C	PG-SOT223-3	1.5 Ohm	3.5 V	MOSFET (Metal Oxide)	Surface Mount	5 W	20 V	200 pF	5 A	600 V	TO-261-4 TO-261AA
INFINEON IPN60R1K5PFD7SATMA1	10 V	4.6 nC	N-Channel	-40 °C	150 °C	PG-SOT223-3	1.5 Ohm	4.5 V	MOSFET (Metal Oxide)	Surface Mount	6 W	20 V	169 pF	3.6 A	600 V	TO-261-4 TO-261AA

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